Diffused Semiconductor Pressure Transmitter
Rugged Aerospace Design


Diffused Semiconductor Pressure Transmitter | PX6000-I

Diffused Semiconductor Pressure Transmitter

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  • High Reliability
  • Long Term Stability
  • All Stainless Steel Case
  • Vacuum Range Available
  • 5 Point NIST Traceable Certificate Included


  • Automotive Test
  • Research & Development
  • Engineering Test & Evaluation
  • Production Testing
  • Flight Recorders
  • Engine Monitoring
  • Ground Support Equipment
  • Built-In Temperature Sensor
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This item is being discontinued.

OMEGA's PX6000 Series pressure transducers fit easily into many applications. These low-cost transducers are small and light, and mounting requires no bulky structures. Users can select from 3 electrical terminations and 6 pressure fittings. The sensor is a small [about 2.54 mm (0.1") square] silicon chip, with 4 diffused strain gages mounted in the stainless steel case. Laser-trimmed resistors provide temperature compensation and adjust zero balance and span. The 4 to 20 mA output easily interfaces with most control and data acquisition systems. The PX6000 uses solid state media isolation for improved reliability. Thin films of chemically inert materials are deposited or grown on the chip surface to provide electrical isolation between the sensor and pressure medium. The sensor is less sensitive to vibration and more dependable in high-shock environments because the films add no significant mass. Corrosion resistance is outstanding, and the isolation will remain effective because there are no gel or oil columns to deteriorate.

The PX6000 is also available in metric configurations, with G1/4 or G1/8 ports, and models from 0-1 to 0-25 bar pressure ranges. Please see the PXM6000 for complete details, or contact our Pressure department for more information..

4 to 20 mA Models

Excitation: 12 to 40 Vdc unregulated
Output: 4 to 20 mA adjustable ±10% FS
Load Impedance (Max): 50 x (V - 10) Ω where V = supply voltage (40 Vdc max)
Zero Balance: 4 mA adjustable ±10% FS
Dielectric Isolation Resistance: 100 MΩ minimum at 45 Vdc applied between the case or a conductive medium and the bridge circuit
Sensing Element: 4-active-arm bridge using a micromachined diffused silicon diaphragm sensor, thin-film media and dielectric isolation barriers
Temperature Sensor: Output resistance @ 24°C (75°F) 900 to 1500
Temperature Coefficient: 8% min, 10% max per 55.5°C (100°F)
Accuracy: Combined linearity, hysteresis and repeatability ≤±0.25% FS for all ranges
Operating Temp Range: -29° to 85°C (-20° to 185°F)
Compensated Temp Range: -29° to 85°C (-20° to 185°F)
Thermal Effects:
    Span: ≤±0.02% of FS/°F.
    Zero: ≤±0.02% of FS/°F
Vibration Sensitivity: At 20 g peak sinusoidal vibration from 10 Hz to 2000 Hz (½" D.A.), the output shall not exceed 0.04% FS/g for 15 psi range to 0.005% FS/g for 100 psi and above
Natural Frequency: Greater than 35 kHz for 100 psi and above
Shock: 100 g, 11 ms half sine wave without damage
Proof Pressure: 2 times rated pressure will not cause changes in performance beyond the specified tolerances
Burst Pressure: 3 times rated pressure for pressure ranges below 200 psi, or 2.5 times rated pressure for pressure ranges above 200 psi, will not cause rupture of the pressure sensor
Wetted Parts: 316 stainless steel, silicon, Pyrex® glass, epoxy, Kovar®
Electrical Connection: PTIH-10-6P (standard), 0.6 m (2') cable or 4-pin solder terminal header (optional)
Pressure Port: MS33656-4 male (std)
Optional: MS33649-4 female, ¼-18 or 18-27 NPT male or female
Weight: 170 g (6 oz) typical
Mating Connector: PTS06A-10-6S (not included)
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